ABSTRACT
Schottky barrier diode based on copper phthalocyanine [CuPc] with binder polymer [polycarbonate MK] has been fabricated and characterized using indium as Schottky contact and gold [Au] as an ohmic contact. A complete study of the current as a function of voltage and temperature is carried out. At low voltages, the current in the forward direction varies exponentially with voltage. At higher voltages, two separate regions of ohmic and space charge limited conduction [SCLC] are observed. The latter process is controlled by an exponential distribution of traps above the valence band edge .Analysis of the results enables the determination of the important trapping parameters. Reverse characteristics are interpreted in terms of both the Poole - Frenkel and Schottky effects. Barrier heights and widths are determined as a function of applied voltage. The photovoltaic parameters of the cells are determined from the analysis of the current - voltage characteristics under illumination. Trap density and Schottky barrier built in potential are estimated from capacitance-voltage measurements